Goford Semiconductor GC11N65F

N650V,RD(MAX)<360M@10V,VTH2.5V~4

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor GC11N65F
Package: Tube
Datasheet: PDF
Stock: 20
SKU: GC11N65F
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Unit Price: $0.7440

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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	11A
Rds On (Max) @ Id, Vgs	360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	901 pF @ 50 V
Power Dissipation (Max)	31.3W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F
Package / Case	TO-220-3 Full Pack
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 650 V 11A 31.3W Through Hole TO-220F