Goford Semiconductor G800N06S2

N60V, 3A,RD<80M@10V,VTH0.7V~1.2V

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G800N06S2
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 8
SKU: G800N06S2
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Rds On (Max) @ Id, Vgs	80mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	458pF @ 30V
Power - Max	1.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Standard Package	4,000

Mosfet Array 60V 3A (Tc) 1.7W (Tc) Surface Mount 8-SOP