Goford Semiconductor G800N06H

N60V, 3A,RD<80M@10V,VTH0.7V~1.2V

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G800N06H
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 10
SKU: G800N06H
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	80mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	457 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	1.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Standard Package	2,500

N-Channel 60 V 3A (Tc) 1.2W (Tc) Surface Mount SOT-223