Parameters |
Mfr |
Goford Semiconductor |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
20.5mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id |
1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
19 nC @ 4.5 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1900 pF @ 15 V |
FET Feature |
- |
Power Dissipation (Max) |
1.3W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
6-DFN (2x2) |
Package / Case |
6-WDFN Exposed Pad |
RoHS Status |
RoHS Compliant |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0000 |
Other Names |
3141-G7P03D2TR |
Standard Package |
3,000 |
P-Channel 30 V 7A (Tc) 1.3W (Tc) Surface Mount 6-DFN (2x2)