Goford Semiconductor G58N06F

N60V, 35A,RD<13M@10V,VTH1.0V~2.4

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G58N06F
Package: Tube
Datasheet: PDF
Stock: 2943
SKU: G58N06F
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Details

Parameters
Mfr	Goford Semiconductor
Series	G
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	13mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	30006 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	44W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F
Package / Case	TO-220-3 Full Pack
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
Standard Package	50

N-Channel 60 V 35A (Tc) 44W (Tc) Through Hole TO-220F