Goford Semiconductor G33N03D52

N30V, 33A,RD<13M@10V,VTH1V~3V, D

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G33N03D52
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 5
SKU: G33N03D52
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Details

Parameters
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	13mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	782 pF @ 15 V
Power Dissipation (Max)	29W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN5*6
Package / Case	DFN5*6
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000
Mfr	Goford Semiconductor
Series	-

N-Channel 30 V 33A (Tc) 29W (Tc) Surface Mount DFN5*6