Goford Semiconductor G2K3N10L6

N100V, 3A,RD<220M@10V,VTH1.0V~2.

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G2K3N10L6
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 3
SKU: G2K3N10L6
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $0.0650

Ext Price: $0.0650

Details

Parameters
Mfr	Goford Semiconductor
Series	G
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3A (Tc)
Rds On (Max) @ Id, Vgs	220mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	536pF @ 50V
Power - Max	1.67W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Supplier Device Package	SOT-23-6L
Base Product Number	G2K3N
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

Mosfet Array 100V 3A (Tc) 1.67W (Tc) Surface Mount SOT-23-6L