Goford Semiconductor G2K3N10H

MOSFET, N-CH,100V, 2A,SOT-223

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G2K3N10H
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 10
SKU: G2K3N10H
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	220mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	434 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 100 V 2A (Tc) 2.4W (Tc) Surface Mount SOT-223