Goford Semiconductor G2K2P10S2E

P-100V,ESD,-3.5A,RD(MAX)<200M@-1

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G2K2P10S2E
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 4
SKU: G2K2P10S2E
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 P-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	3.5A (Tc)
Rds On (Max) @ Id, Vgs	200mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1623pF @ 50V
Power - Max	3.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
Base Product Number	G2K2P
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
ECCN	EAR99
HTSUS	8541.29.0000
Standard Package	4,000

Mosfet Array 100V 3.5A (Tc) 3.1W (Tc) Surface Mount 8-SOP