Goford Semiconductor G20N06D52

N60V,RD(MAX)<30M@10V,RD(MAX)<40M

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G20N06D52
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 20
SKU: G20N06D52
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Rds On (Max) @ Id, Vgs	30mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1220pF @ 30V
Power - Max	45W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Supplier Device Package	8-DFN (4.9x5.75)
Base Product Number	G20N
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

Mosfet Array 60V 20A (Ta) 45W (Ta) Surface Mount 8-DFN (4.9x5.75)