Goford Semiconductor G20N03D2

N30V,RD(MAX)<24M@10V,RD(MAX)<29M

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G20N03D2
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 6
SKU: G20N03D2
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	24mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	873 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	1.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-DFN (2x2)
Package / Case	6-WDFN Exposed Pad
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

N-Channel 30 V 9A (Tc) 1.5W (Tc) Surface Mount 6-DFN (2x2)