Goford Semiconductor G12P10KE

P-100V,ESD,-12A,RD(MAX)<200M@-10

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G12P10KE
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 50
SKU: G12P10KE
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Details

Parameters
Mfr	Goford Semiconductor
Series	G
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1720 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
Standard Package	2,500

P-Channel 100 V 12A (Tc) 57W (Tc) Surface Mount TO-252