Goford Semiconductor G080P06T

P-60V,-195A,RD(MAX)<7.5M@-10V,VT

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G080P06T
Package: Tube
Datasheet: PDF
Stock: 8669
SKU: G080P06T
Pricing:we created an exceptionally flexible and competitive pricing policy.

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Details

Parameters
Power Dissipation (Max)	294W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50
Mfr	Goford Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	186 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	15195 pF @ 30 V
FET Feature	-

P-Channel 60 V 195A (Tc) 294W (Tc) Through Hole TO-220