Goford Semiconductor G06NP06S2

N/P60V,RD(MAX)<35M@10V,RD(MAX)<4

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G06NP06S2
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 16
SKU: G06NP06S2
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Rds On (Max) @ Id, Vgs	35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA, 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22nC @ 10V, 25nC @ 10V
Power - Max	2W (Tc), 2.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP
Base Product Number	G06N
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	4,000

Mosfet Array 60V 6A (Tc) 2W (Tc), 2.5W (Tc) Surface Mount 8-SOP