Goford Semiconductor G06N06S

N60V,RD(MAX)<22M@10V,RD(MAX)<35M

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor G06N06S
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 20
SKU: G06N06S
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	8A
Rds On (Max) @ Id, Vgs	22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1600 pF @ 30 V
Power Dissipation (Max)	2.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP
Package / Case	8-SOIC (0.154", 3.90mm Width)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	4,000

N-Channel 60 V 8A 2.1W Surface Mount 8-SOP