Goford Semiconductor 630A

N200V,RD(MAX)<280M@10V,VTH1V~3V,

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor 630A
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 25
SKU: 630A
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	11A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	280mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	509 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	83W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-252 (DPAK)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 200 V 11A 83W Through Hole TO-252 (DPAK)