Goford Semiconductor 18N20J

N200V, 18A,RD<0.16@10V,VTH1V~3V,

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor 18N20J
Package: Tube
Datasheet: PDF
Stock: 2961
SKU: 18N20J
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Details

Parameters
Mfr	Goford Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	18A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.7 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	836 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	65.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
RoHS Status	RoHS Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0000
Standard Package	75

N-Channel 200 V 18A (Tj) 65.8W (Tc) Through Hole TO-251