Goford Semiconductor 18N20

N 200V, RD(MAX)<0.16@10V,VTH1.0V

Manufacturer: Goford Semiconductor
Manufacturer's number: Goford Semiconductor 18N20
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: 18N20
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Details

Parameters
Mfr	Goford Semiconductor
Series	18N20
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	18A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.7 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	836 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	65.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 200 V 18A (Tj) 65.8W (Tc) Surface Mount TO-252