Global Power Technology-GPT G5S12010C

DIODE SIL CARB 1.2KV 34.2A TO252

Manufacturer: Global Power Technology-GPT
Manufacturer's number: Global Power Technology-GPT G5S12010C
Package: Cut Tape (CT)
Datasheet: PDF
Stock: 1907
SKU: G5S12010C
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Details

Parameters
Mfr	Global Power Technology-GPT
Series	-
Package	Cut Tape (CT)
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	34.2A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 10 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	50 µA @ 1200 V
Capacitance @ Vr, F	825pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-252
Operating Temperature - Junction	-55°C ~ 175°C
REACH Status	REACH info available upon request
ECCN	EAR99
HTSUS	8541.10.0080
Standard Package	30

Diode 1200 V 34.2A Surface Mount TO-252