Global Power Technology-GPT G5S12008D

DIODE SIL CARB 1.2KV 26.1A TO263

Manufacturer: Global Power Technology-GPT
Manufacturer's number: Global Power Technology-GPT G5S12008D
Package: Cut Tape (CT)
Datasheet: PDF
Stock: 3452
SKU: G5S12008D
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Details

Parameters
Mfr	Global Power Technology-GPT
Series	-
Package	Cut Tape (CT)
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Current - Average Rectified (Io)	26.1A
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 8 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	50 µA @ 1200 V
Capacitance @ Vr, F	550pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263
Operating Temperature - Junction	-55°C ~ 175°C
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH info available upon request
ECCN	EAR99
HTSUS	8541.10.0080
Standard Package	30

Diode 1200 V 26.1A Surface Mount TO-263