Global Power Technology-GPT G4S06506HT

DIODE SIL CARB 650V 9.7A TO220F

Quantity:

Add to Cart

Unit Price: $3.9000

Ext Price: $3.9000

Details

Diode 650 V 9.7A Through Hole TO-220F

Parameters
Mfr	Global Power Technology-GPT
Series	-
Package	Cut Tape (CT)
Product Status	Active
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	650 V
Current - Average Rectified (Io)	9.7A
Voltage - Forward (Vf) (Max) @ If	1.8 V @ 6 A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0 ns
Current - Reverse Leakage @ Vr	50 µA @ 650 V
Capacitance @ Vr, F	181pF @ 0V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2 Full Pack
Supplier Device Package	TO-220F
Operating Temperature - Junction	-55°C ~ 175°C
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH info available upon request
ECCN	EAR99
HTSUS	8541.10.0080
Standard Package	30