GE Aerospace GE17042BCA3

1700V 425A SiC Dual Module

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Details

Mosfet Array 1700V (1.7kV) 425A (Tc) 1250W Chassis Mount

Parameters
Mfr	GE Aerospace
Series	-
Package	Bulk
Product Status	Active
Technology	Silicon Carbide (SiC)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C	425A (Tc)
Rds On (Max) @ Id, Vgs	4.45mOhm @ 425A, 20V
Vgs(th) (Max) @ Id	4.5V @ 160mA
Gate Charge (Qg) (Max) @ Vgs	1207nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds	29100pF @ 900V
Power - Max	1250W
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	-
Base Product Number	GE17042
RoHS Status	RoHS non-compliant
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	4014-GE17042BCA3
Standard Package	1