GaNPower GPIHV30SB5L

GANFET N-CH 1200V 30A TO263-5L

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Unit Price: $22.0000

Ext Price: $22.0000

Details

N-Channel 1200 V 30A Surface Mount Die

Parameters
Mfr	GaNPower
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	30A
Drive Voltage (Max Rds On, Min Rds On)	6V
Vgs(th) (Max) @ Id	1.4V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs	8.25 nC @ 6 V
Vgs (Max)	+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds	236 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	Vendor Undefined
Other Names	4025-GPIHV30SB5L
Standard Package	1