GaNPower GPI65005DF

GANFET N-CH 650V 5A DFN 5X6

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Unit Price: $2.5000

Ext Price: $2.5000

Details

N-Channel 650 V 5A Surface Mount Die

Parameters
Mfr	GaNPower
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	5A
Drive Voltage (Max Rds On, Min Rds On)	6V
Vgs(th) (Max) @ Id	1.4V @ 1.75mA
Gate Charge (Qg) (Max) @ Vgs	2.6 nC @ 6 V
Vgs (Max)	+7.5V, -12V
Input Capacitance (Ciss) (Max) @ Vds	45 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	Die
Package / Case	Die
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	4025-GPI65005DFTR
Standard Package	1