Infineon Technologies SPI21N50C3HKSA1

SPI21N50C3HKSA1

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies SPI21N50C3HKSA1
Package: Tube
Datasheet: PDF
Stock: 3865
SKU: SPI21N50C3HKSA1
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Details

Parameters
Mfr	Infineon Technologies
Series	CoolMOS™
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 13.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2400 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3-1
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number	SPI21N
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	SP000014463
Standard Package	500

N-Channel 500 V 21A (Tc) 208W (Tc) Through Hole PG-TO262-3-1