| Parameters |
| Mfr |
Texas Instruments |
| Series |
NexFET™ |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel (Half Bridge) |
| FET Feature |
Logic Level Gate, 5V Drive |
| Drain to Source Voltage (Vdss) |
25V |
| Current - Continuous Drain (Id) @ 25°C |
20A (Ta) |
| Rds On (Max) @ Id, Vgs |
9.1mOhm @ 20A, 5V, 3.4mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id |
1.9V @ 250µA, 1.6V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
3.8nC @ 45V, 7.4nC @ 45V |
| Input Capacitance (Ciss) (Max) @ Vds |
494pF @ 12.5V, 970pF @ 12.5V |
| Power - Max |
6W |
| Operating Temperature |
-55°C ~ 125°C |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Supplier Device Package |
8-VSON (3.3x3.3) |
| Base Product Number |
CSD86336Q3 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
2,500 |
Mosfet Array 25V 20A (Ta) 6W Surface Mount 8-VSON (3.3x3.3)