Infineon Technologies IRFR812PBF

IRFR812PBF

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRFR812PBF
Package: Tube
Datasheet: PDF
Stock: 7541
SKU: IRFR812PBF
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
Product Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.2Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	810 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D-Pak
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	SP001557154
Standard Package	75

N-Channel 500 V 3.6A (Tc) 78W (Tc) Surface Mount D-Pak