Fairchild Semiconductor FQS4900TF

POWER FIELD-EFFECT TRANSISTOR, 1

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FQS4900TF
Package: Bulk
Datasheet: PDF
Stock: 36
SKU: FQS4900TF
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Details

Parameters
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1
Mfr	Fairchild Semiconductor
Series	QFET®
Package	Bulk
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	N and P-Channel
FET Feature	-
Drain to Source Voltage (Vdss)	60V, 300V
Current - Continuous Drain (Id) @ 25°C	1.3A, 300mA
Rds On (Max) @ Id, Vgs	550mOhm @ 650mA, 10V
Vgs(th) (Max) @ Id	1.95V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	2.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC
Base Product Number	FQS4900

Mosfet Array 60V, 300V 1.3A, 300mA 2W Surface Mount 8-SOIC