Fairchild Semiconductor FQB7N65CTM

FQB7N65CTM

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FQB7N65CTM
Package: Bulk
Datasheet: PDF
Stock: 7
SKU: FQB7N65CTM
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Details

Parameters
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1245 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	173W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (TO-263)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	ROHS3 Compliant
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	800
Mfr	Fairchild Semiconductor
Series	QFET®
Package	Bulk

N-Channel 650 V 7A (Tc) 173W (Tc) Surface Mount D2PAK (TO-263)