Fairchild Semiconductor FDN363N

N-CHANNEL POWER MOSFET

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FDN363N
Package: Bulk
Datasheet: PDF
Stock: 53
SKU: FDN363N
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	PowerTrench®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	240mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	500mW (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SuperSOT™-3
Package / Case	TO-236-3, SC-59, SOT-23-3
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000

N-Channel 100 V 1A (Tc) 500mW (Tc) Surface Mount SuperSOT™-3