Fairchild Semiconductor FDMD8900

POWER FIELD-EFFECT TRANSISTOR, N

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FDMD8900
Package: Bulk
Datasheet: PDF
Stock: 15
SKU: FDMD8900
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	-
Package	Bulk
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	19A, 17A
Rds On (Max) @ Id, Vgs	4mOhm @ 19A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2605pF @ 15V
Power - Max	2.1W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	12-PowerWDFN
Supplier Device Package	12-Power3.3x5
Base Product Number	FDMD89
ECCN	EAR99
HTSUS	8542.39.0001
Standard Package	1

Mosfet Array 30V 19A, 17A 2.1W Surface Mount 12-Power3.3x5