| Parameters |
| Mfr |
Fairchild Semiconductor |
| Series |
STripFET™ |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
60 V |
| Current - Continuous Drain (Id) @ 25°C |
350mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
| Rds On (Max) @ Id, Vgs |
5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
2 nC @ 5 V |
| Vgs (Max) |
±18V |
| Input Capacitance (Ciss) (Max) @ Vds |
43 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
350mW (Ta) |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-92-3 |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Base Product Number |
2N70 |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Standard Package |
1 |
N-Channel 60 V 350mA (Tc) 350mW (Ta) Through Hole TO-92-3