Parameters | |
---|---|
Mfr | Toshiba Semiconductor and Storage |
Series | U-MOSIX-H |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4.4mOhm @ 29A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 48.2 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3280 pF @ 30 V |
FET Feature | - |
Power Dissipation (Max) | 87W (Tc) |
Operating Temperature | 175°C |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Base Product Number | TK4R4P06 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 2,500 |