EPC Space, LLC FBG20N04ASH

GAN FET HEMT 200V 4A 4FSMD-A

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Unit Price: $408.3100

Ext Price: $408.3100

Details

N-Channel 200 V 4A (Tc) Surface Mount 4-SMD

Parameters
Mfr	EPC Space, LLC
Series	e-GaN®
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V
Rds On (Max) @ Id, Vgs	130mOhm @ 4A, 5V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 5 V
Vgs (Max)	+6V, -4V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-SMD
Package / Case	4-SMD, No Lead
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	0000.00.0000
Other Names	4107-FBG20N04ASH
Standard Package	1