Parameters | |
---|---|
Mfr | EPC Space, LLC |
Series | eGaN® |
Package | Bulk |
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | - |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Rds On (Max) @ Id, Vgs | 130mOhm @ 4A, 5V |
Vgs(th) (Max) @ Id | 2.8V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 3nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 100V |
Power - Max | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 4-SMD, No Lead |
Supplier Device Package | 4-SMD |
Base Product Number | FBG20 |
Moisture Sensitivity Level (MSL) | Not Applicable |
HTSUS | 0000.00.0000 |
Other Names | 4107-FBG20N04AC |
Standard Package | 169 |