| Parameters |
| Mfr |
EPC Space, LLC |
| Series |
eGaN® |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
- |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
200V |
| Current - Continuous Drain (Id) @ 25°C |
4A (Tc) |
| Rds On (Max) @ Id, Vgs |
130mOhm @ 4A, 5V |
| Vgs(th) (Max) @ Id |
2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
3nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds |
150pF @ 100V |
| Power - Max |
- |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
4-SMD, No Lead |
| Supplier Device Package |
4-SMD |
| Base Product Number |
FBG20 |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| HTSUS |
0000.00.0000 |
| Other Names |
4107-FBG20N04AC |
| Standard Package |
169 |
Mosfet Array 200V 4A (Tc) Surface Mount 4-SMD