| Parameters |
| Mfr |
Renesas Electronics America Inc |
| Series |
Automotive, AEC-Q101 |
| Package |
- |
| Product Status |
Obsolete |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
3 N and 3 P-Channel (3-Phase Bridge) |
| FET Feature |
Logic Level Gate, 4.5V Drive |
| Drain to Source Voltage (Vdss) |
60V |
| Current - Continuous Drain (Id) @ 25°C |
20A |
| Rds On (Max) @ Id, Vgs |
20mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 10V |
| Power - Max |
54W |
| Operating Temperature |
175°C |
| Mounting Type |
Surface Mount |
| Package / Case |
20-SOIC (0.433", 11.00mm Width) Exposed Pad |
| Supplier Device Package |
20-HSOP |
| Base Product Number |
RJM0603 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
1 |
Mosfet Array 60V 20A 54W Surface Mount 20-HSOP