Parameters |
Mfr |
Renesas Electronics America Inc |
Series |
Automotive, AEC-Q101 |
Package |
- |
Product Status |
Obsolete |
Technology |
MOSFET (Metal Oxide) |
Configuration |
3 N and 3 P-Channel (3-Phase Bridge) |
FET Feature |
Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
20A |
Rds On (Max) @ Id, Vgs |
20mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
43nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
2600pF @ 10V |
Power - Max |
54W |
Operating Temperature |
175°C |
Mounting Type |
Surface Mount |
Package / Case |
20-SOIC (0.433", 11.00mm Width) Exposed Pad |
Supplier Device Package |
20-HSOP |
Base Product Number |
RJM0603 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
Mosfet Array 60V 20A 54W Surface Mount 20-HSOP