Diodes Incorporated ZXMN6A11GTA-52

MOSFET BVDSS: 41V~60V SOT223 T&R

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated ZXMN6A11GTA-52
Package: Bulk
Datasheet: PDF
Stock: 3026
SKU: ZXMN6A11GTA-52
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Unit Price: $0.2605

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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	120mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	5.7 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	330 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223
Package / Case	TO-261-4, TO-261AA
Base Product Number	ZXMN6
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-ZXMN6A11GTA-52
Standard Package	1,000

N-Channel 60 V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223