Diodes Incorporated DMWS120H100SM4

SIC MOSFET BVDSS: >1000V TO247-4

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMWS120H100SM4
Package: Tube
Datasheet: PDF
Stock: 14
SKU: DMWS120H100SM4
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Unit Price: $20.2100

Ext Price: $20.2100

Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	37.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 15V
Vgs(th) (Max) @ Id	3.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 15 V
Vgs (Max)	+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds	1516 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	208W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4
Base Product Number	DMWS120
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMWS120H100SM4
Standard Package	30

N-Channel 1200 V 37.2A (Tc) 208W (Tc) Through Hole TO-247-4