| Parameters |
| Mfr |
Diodes Incorporated |
| Series |
Automotive, AEC-Q101 |
| Package |
Bulk |
| Product Status |
Active |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 N-Channel |
| FET Feature |
Standard |
| Drain to Source Voltage (Vdss) |
60V |
| Current - Continuous Drain (Id) @ 25°C |
9.2A (Ta), 33.2A (Tc) |
| Rds On (Max) @ Id, Vgs |
19mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id |
2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
17nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
864pF @ 30V |
| Power - Max |
2.5W (Ta), 37.5W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-PowerTDFN |
| Supplier Device Package |
PowerDI5060-8 |
| Base Product Number |
DMTH6016 |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
31-DMTH6016LPDQ-13-52 |
| Standard Package |
2,500 |
Mosfet Array 60V 9.2A (Ta), 33.2A (Tc) 2.5W (Ta), 37.5W (Tc) Surface Mount PowerDI5060-8