Diodes Incorporated DMT35M8LDG-7

MOSFET BVDSS: 25V~30V POWERDI333

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMT35M8LDG-7
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 6796
SKU: DMT35M8LDG-7
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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual) Asymmetrical
FET Feature	Standard
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 15.3A (Ta)
Rds On (Max) @ Id, Vgs	4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	22.7nC @ 10V, 16.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1510pF @ 15V, 1032pF @ 15V
Power - Max	980mW (Ta), 2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Supplier Device Package	PowerDI3333-8 (Type G)
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	2,000

Mosfet Array 30V 17A (Ta), 15.3A (Ta) 980mW (Ta), 2W (Tc) Surface Mount PowerDI3333-8 (Type G)