Diodes Incorporated DMN39M1LK3-13

MOSFET BVDSS: 25V~30V TO252 T&R

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMN39M1LK3-13
Package: Bulk
Datasheet: PDF
Stock: 4317
SKU: DMN39M1LK3-13
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Unit Price: $0.6300

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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	17.9A (Ta), 89.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	38.6 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2253 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.4W (Ta), 65.7W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	DMN39
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMN39M1LK3-13
Standard Package	2,500

N-Channel 30 V 17.9A (Ta), 89.3A (Tc) 1.4W (Ta), 65.7W (Tc) Surface Mount TO-252, (D-Pak)