Diodes Incorporated DMN2009UFDF-7

MOSFET BVDSS: 8V~24V U-DFN2020-6

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMN2009UFDF-7
Package: Bulk
Datasheet: -
Stock: 9259
SKU: DMN2009UFDF-7
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Unit Price: $0.1462

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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	12.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	9mOhm @ 8.5A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	27.9 nC @ 10 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1083 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-DFN2020-6 (Type F)
Package / Case	6-UDFN Exposed Pad
Base Product Number	DMN2009
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMN2009UFDF-7
Standard Package	3,000

N-Channel 20 V 12.8A (Ta) 1.3W (Ta) Surface Mount U-DFN2020-6 (Type F)