Diodes Incorporated DMN2009UCA4-7

MOSFET BVDSS: 8V~24V X4-DSN1717-

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMN2009UCA4-7
Package: Bulk
Datasheet: PDF
Stock: 1297
SKU: DMN2009UCA4-7
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Details

Parameters
HTSUS	8541.21.0095
Other Names	31-DMN2009UCA4-7
Standard Package	3,000
Mfr	Diodes Incorporated
Series	-
Package	Bulk
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	-
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	10.3A (Ta)
Rds On (Max) @ Id, Vgs	11.9mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 640µA
Gate Charge (Qg) (Max) @ Vgs	17.5nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds	1780pF @ 10V
Power - Max	900mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-XFBGA, DSBGA
Supplier Device Package	X4-DSN1717-4
Base Product Number	DMN2009
ECCN	EAR99

Mosfet Array 20V 10.3A (Ta) 900mW Surface Mount X4-DSN1717-4