Diodes Incorporated DMN10H6D2LFDB-7

MOSFET BVDSS: 61V~100V U-DFN2020

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMN10H6D2LFDB-7
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 9403
SKU: DMN10H6D2LFDB-7
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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tape & Reel (TR)
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Dual)
FET Feature	-
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	270mA (Ta)
Rds On (Max) @ Id, Vgs	6Ohm @ 190mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	41pF @ 50V
Power - Max	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-UDFN Exposed Pad
Supplier Device Package	U-DFN2020-6 (Type B)
Base Product Number	DMN10
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMN10H6D2LFDB-7TR
Standard Package	3,000

Mosfet Array 100V 270mA (Ta) 700mW (Ta) Surface Mount U-DFN2020-6 (Type B)