Diodes Incorporated DMN1032UCP4-7

MOSFET BVDSS: 8V~24V X1-DSN1010-

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMN1032UCP4-7
Package: Bulk
Datasheet: PDF
Stock: 5311
SKU: DMN1032UCP4-7
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Unit Price: $0.1462

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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	28mOhm @ 1A, 10V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.2 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	325 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	790mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X1-DSN1010-4 (Type B)
Package / Case	4-XFBGA, DSBGA
Base Product Number	DMN1032
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMN1032UCP4-7
Standard Package	3,000

N-Channel 12 V 5A (Ta) 790mW (Ta) Surface Mount X1-DSN1010-4 (Type B)