Diodes Incorporated DMJ70H1D3SK3-13

MOSFET BVDSS: 651V~800V TO252 T&

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMJ70H1D3SK3-13
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 8563
SKU: DMJ70H1D3SK3-13
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Details

Parameters
Mfr	Diodes Incorporated
Series	-
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	700 V
Current - Continuous Drain (Id) @ 25°C	4.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9.8 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	264 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	57W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	DMJ70
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMJ70H1D3SK3-13TR
Standard Package	2,500

N-Channel 700 V 4.7A (Tc) 57W (Tc) Surface Mount TO-252, (D-Pak)