Diodes Incorporated DMG3415UFY4Q-7-52

MOSFET BVDSS: 8V~24V X2-DFN2015-

Manufacturer: Diodes Incorporated
Manufacturer's number: Diodes Incorporated DMG3415UFY4Q-7-52
Package: Bulk
Datasheet: PDF
Stock: 3652
SKU: DMG3415UFY4Q-7-52
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Unit Price: $0.1107

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Details

Parameters
Mfr	Diodes Incorporated
Series	Automotive, AEC-Q101
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	16 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	39mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	282 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	650mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	X2-DFN2015-3
Package / Case	3-XDFN
Base Product Number	DMG3415
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	31-DMG3415UFY4Q-7-52
Standard Package	3,000

P-Channel 16 V 2.5A (Ta) 650mW Surface Mount X2-DFN2015-3