CoolCAD CC-C2-B15-0322

SiC Power MOSFET 1200V 12A

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Unit Price: $15.0000

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Details

N-Channel 1200 V 12A (Ta) 100W (Tc) Through Hole TO-247

Parameters
Mfr	CoolCAD
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	135mOhm @ 10A, 15V
Vgs(th) (Max) @ Id	3.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 15 V
Vgs (Max)	+15V, -5V
Input Capacitance (Ciss) (Max) @ Vds	1810 pF @ 200 V
FET Feature	Standard
Power Dissipation (Max)	100W (Tc)
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247
Package / Case	TO-247-4
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	3 (168 Hours)
REACH Status	REACH Unaffected
Other Names	3892-CC-C2-B15-0322
Standard Package	5