Parameters |
Mfr |
Comchip Technology |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
6.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
60mOhm @ 3.2A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
34 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1325 pF @ 30 V |
FET Feature |
- |
Power Dissipation (Max) |
3.6W (Ta), 83.3W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DFN5x6 (PR-PAK) |
Package / Case |
8-PowerTDFN |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
641-CMS42N10H8-HF |
Standard Package |
1 |
N-Channel 100 V 6.6A (Ta) 3.6W (Ta), 83.3W (Tc) Surface Mount DFN5x6 (PR-PAK)