Parameters |
Mfr |
Central Semiconductor Corp |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
860mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4.5V |
Rds On (Max) @ Id, Vgs |
240mOhm @ 200mA, 1.8V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
3.56 nC @ 4.5 V |
Vgs (Max) |
8V |
Input Capacitance (Ciss) (Max) @ Vds |
200 pF @ 16 V |
FET Feature |
Schottky Diode (Isolated) |
Power Dissipation (Max) |
1.65W (Ta) |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TLM832D |
Package / Case |
8-TDFN Exposed Pad |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
1514-CTLM8110-M832DBK |
Standard Package |
1 |
P-Channel 20 V 860mA (Ta) 1.65W (Ta) Surface Mount TLM832D